febr uary 2002 200 2 fairchild semiconductor corporation fdz255 3 n rev d (w) fdz255 3 n dual n - channel 2.5v specified powertrench bga mosfet general description combining fairchild?s advanced 2.5v specified powertrench process with state - of - the - art bga packaging, the fdz255 3 n minimizes both pcb space and r ds(on) . this dual bga mosfet embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra - low profile packaging, low gate charge, and low r ds(on) . applications battery management load switch battery protection features 9.6 a, 20 v. r ds(on) = 14 m w @ v gs = 4.5 v r ds(on) = 20 m w @ v gs = 2.5 v occupies only 0.10 cm 2 of pcb area: 1/3 the area of so - 8. ultra - thin package: less than 0.70 mm height when mounted to pcb. outstanding thermal transfer characteristics: significantly better than so - 8. ultra - low q g x r ds(on) figure - of - merit high power and current handling capability q 2 q 1 p i n 1 g s d d s s s d s s s s g s s d d d bottom p i n 1 top q2 q1 s s g g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain - source voltage 20 v v gss gate - source voltage 12 v i d drain current ? continuous (note 1a) 9.6 a ? pulsed 20 p d power dissipation (steady state) (note 1a) 2.1 w t j , t stg operating and storage junction temperature range ? 55 to +1 50 c thermal characteristics r q ja thermal resistance, junctio n - to - ambient (note 1a) 60 c/w r q jb thermal resistance, junction - to - ball (note 1) 6.3 r q jc thermal resistance, junction - to - case (note 1) 0.6 package marking and ordering information device marking device reel size tape width quantity 255 3 n fdz255 3 n 7?? 12mm 3000 units fdz255 3 n
fdz255 3 n rev d (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = 250 m a 20 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 14 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 m a i gssf gate ? body leakage , forward v gs = 12 v, v ds = 0 v 100 na i gssr gate ? body l eakage , reverse v gs = ? 12 v , v ds = 0 v ? 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a 0.6 0.9 1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c ? 3 mv/ c r ds(on) static drain ? source on ? resistance v gs = 4.5 v, i d = 9.6 a v gs = 2.5 v, i d = 7.9 a v gs = 4.5 v, i d = 9.6 a, t j =125 c 11 15 1 5 1 4 20 20 m w i d(on) on ? state drain current v gs = 4.5 v, v ds = 5 v 10 a g fs forward transconductance v ds = 5 v, i d = 9.6 a 4 5 s dynamic characteristics c iss input capacitance 1299 pf c oss output capacitance 317 pf c rss reverse transfer capacita nce v ds = 10 v, v gs = 0 v, f = 1.0 mhz 166 pf switching characteristics (note 2) t d(on) turn ? on delay time 9.0 18 ns t r turn ? on rise time 11 2 0 ns t d(off) turn ? off delay time 2 9 46 ns t f turn ? off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 11 2 0 ns q g total gate charge 12 1 7 nc q gs gate ? source charge 2. 3 nc q gd gate ? drain charge v ds = 10 v, i d = 9.6 a, v gs = 4.5 v 3.2 nc drain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current 1.7 a v sd drain ? source diode forward voltage v gs = 0 v, i s = 1.7 a (note 2) 0.7 1.2 v t rr diode reverse recovery time 21 ns q rr diode reverse recovery charge i f = 9.6 a, d if /d t = 100 a/s 13 nc notes: 1. r q ja is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of fr - 4 material. the thermal resistance from the junction to the circuit board side of the sol der ball, r q jb , is defined for reference. for r q jc , the thermal reference point for the case is defined as the top surface of the copper chip carrier. r q jc and r q jb are guaranteed by design while r q ja is determined by the user's board design. (a). r q ja = 60c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb (b). r q ja = 108c/w when mounted on a minimum pad of 2 oz copper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fdz255 3 n
fdz255 3 n rev d (w) dimensional outline and pad layout fdz255 3 n
fdz255 3 n rev d (w) typical characteristics 0 10 20 30 40 0 0.5 1 1.5 2 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 3.5v 2.5v 2.0v v gs =4.5v 0.8 1 1.2 1.4 1.6 0 10 20 30 40 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 3.5v 3.0v 4.0v 4.5v figure 1. on - region characteristics. figure 2. on - resistance variatio n with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 9.6a v gs = 4.5v 0.005 0.015 0.025 0.035 0.045 1 2 3 4 5 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 4.8 a t a = 125 o c t a = 25 o c figure 3. on - resistance variation with temperature. figure 4. on - resistance variation with gate - to - source vol tage. 0 10 20 30 40 0.5 1 1.5 2 2.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdz255 3 n
fdz255 3 n rev d (w) typical characte ristics 0 1 2 3 4 5 0 2 4 6 8 10 12 14 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 9.6a v ds = 5v 15v 10v 0 500 1000 1500 2000 0 5 10 15 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 4.5v single pulse r q ja = 108 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 108c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) * r q ja r q ja = 108 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. t ransient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. fdz255 3 n
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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